smd type transistors 1 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 www.kexin.com.cn pnp silicon af transistors KC808(bc808) features high collector current. high current gain. low collector-emitter saturation voltage. marking no. KC808-16 KC808-25 KC808-40 marking 9ga 9gb 9gc hfe 100 250 160 400 250 630 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v collector current (dc) i c -800 ma power dissipation p d 310 mw junction temperature t j 150 storage temperature t stg -65to+150 electrical characteristics ta = 25 symbol testconditons min typ max unit v cbo i c =-10 a,v be =0 -30 v v ceo i c =-10ma,i b =0 -25 v v ebo i e =-10 a, i c =0 -5 v collector cutoff current i ces v cb =-25v,v be = 0 -100 na i ebo v eb =-4v,i c = 0 -100 na i c =-100ma,v ce = -1 v 100 630 i c =-300ma,v ce =-1v 60 v ce(sat) i c =-500ma,i b =-50ma -0.7 v v be(on) v ce =-1v,i c =300ma -1.2 v output capacitance c ob v cb =-10v,f=1mhz 12 pf f t i c =-10ma,v ce =-5v,f=50mhz 100 mhz * pulsed: pw 350 s, duty cycle 2% h fe collector-to-baser breakdown voltage collector-to-emitter breakdown voltage dc current gain * base emitter on voltage transition frequency collector saturation voltage * parameter emitter cutoff current emitter-to-base breakdown voltage
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